A project of the Theoretical Chemical and Quantum Physics Group
Mr. Jackson Smith, Mr. Jesse Vaitkus, Dr. Daniel Drumm, A/Prof. Jared Cole, and Prof. Salvy Russo
Brief Project Outline
We are rapidly approaching the lithography limit for manufacturing nanoelectronic devices. As these devices get smaller, their quantum properties become important. These properties can be used by quantum computers, which have the potential to revolutionise the field of computing and information processing.
To make components for a quantum computer, we must use bottom-up approaches to manufacturing. And, while we are not at a stage where large-scale commercial manufacturing is feasible, this technology has developed to the point where it is possible to have control over the manufacturing process with atomic precision. For example, new structures such as quantum dots, layers, and wires have all been made experimentally by doping silicon with phosphorus atoms at extremely high concentrations.
To understand how we can use these devices, we first need to understand their electronic structure. One of the strengths of our group is in performing highly accurate density-functional theory (DFT) calculations to find the ground-state electronic properties of nano-scale structures. The results of these DFT calculations are then used to build effective models for these devices using effective-mass theory, the nonequilibrium Green's functions formalism, and tight-binding theory. This many-pronged approach allows us to model systems that are of direct relavance to current experiments.
J. S. Smith, J. H. Cole and S. P. Russo, Electronic properties of d-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method, Phys. Rev. B 89 035306 (2014)
D. W. Drumm, J. S. Smith, M. C. Per, A. Budi, L. C. L. Hollenberg, and S. P. Russo, Ab initio Electronic Properties of Monolayer Phosphorus Nanowires, Phys. Rev. Lett. 110 126802 (2013)